dm n2055u document number: ds 40487 rev. 3 - 2 1 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c 2 0 v 38 m ? @ v gs = 4 .5 v 4.8a 4 5 m ? @ v gs = 2 .5v 4.5a description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions features ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: sot 23 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper leadframe . solderable per mil - std - 202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm n2055 u - 7 sot 23 3 , 000/ tape & reel dm n205 5 u - 13 sot 23 10 , 000/ tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs), 2011/65/eu (rohs 2) & 2015/863/eu (rohs 3) compliant. 2. see https://www.diodes.com/quality/lead - free/ for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at https:// www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2017 201 8 201 9 20 20 20 21 20 22 20 23 2024 2025 code e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d equivalent circuit sot23 d s g as5 = product type marking code y m = date code marking y = last d igit of y ear (ex: 8 = 201 8 ) m = month (ex: 9 = september) top view top view as5 e3 d g s
dm n2055u document number: ds 40487 rev. 3 - 2 2 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 8 v continuous drain current (note 6 ) steady state t a = + 25c t a = + 85 c i d 4.8 3.8 a pulsed drain current ( 10 dm 25 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 0.8 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 162 c/w total power dissipation (note 6 ) p d 1.2 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 113 c/w operating and storage temperature range t j, t stg - 55 to +1 50 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 20 gs = 0v, i d = 250 a j = + 25c i dss ds = 20 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0. 4 ds = v gs , i d = 2 50 a ds(on) 3 8 m ? gs = 4.5 v, i d = 3.6 a 32 4 5 v gs = 2.5 v, i d = 3.1 a diode forward voltage v sd gs = 0 v, i s = 1 a dynamic characteristics (note 8 ) input capacitance c iss ds = 1 0 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g gs = 4.5 v, v ds = 1 0 v, i d = 6 a gate - source charge q gs gd d(on) dd = 1 0 v, v gs = 5 v, r l = 1 . 7 ? g = 6 ? r d(off) f rr f = 1.0 a, di/dt = 1 00a/ rr f = 1.0 a, di/dt = 1 00a/ notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing .
dm n2055u document number: ds 40487 rev. 3 - 2 3 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 v = 2.5v gs v = 3v gs v = 1.5v gs v = 4.5v gs v = 8v gs v = 2v gs v = 1.3v gs v = 1.1v gs v = 1v gs i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristic 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = 5.0v ds t = 150c j t = 125c j t = 85c j t = 25c j t = -55c j i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 0.00 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 18 20 v = 4.5v gs v = 2.5v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage 0 30 60 90 120 150 0 2 4 6 8 i = 3.1a d i = 3.6a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage 0 0.01 0.02 0.03 0.04 0.05 0.06 0 2 4 6 8 10 t = 150c j t = 125c j t = 85c j t = 25c j t = -55c j v = 4.5v ds r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 3.1a d v = 2.5v gs i = 3.1a d r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature
dm n2055u document number: ds 40487 rev. 3 - 2 4 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u v gs(th) , gate thre s hold voltage (v) v gs , gate - source voltage (v) t j , junction temperature ( c ) figure 8 gate threshold variation vs. junction temperature 0 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 v = 4.5v gs i = 3.1a d v = 2.5v gs i = 3.1a d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 t = 150c j t = 125c j t = 85c j t = 25c j t = -55c j i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 10 100 1000 0 5 10 15 20 c iss c oss c rss f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance 0 2 4 6 8 0 1 2 3 4 5 6 7 8 v = 10v ds i = 6a d v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0.01 0.1 1 10 100 0.1 1 10 100 r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j(m ax) t = 25c c v = 4.5v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm n2055u document number: ds 40487 rev. 3 - 2 5 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm n2055u document number: ds 40487 rev. 3 - 2 6 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot23 sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a 0 8 -- all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot23 dimensions value (in mm) c 2.0 x 0.8 x1 1.35 y 0.9 y1 2.9 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a x y y1 c x1
dm n2055u document number: ds 40487 rev. 3 - 2 7 of 7 www.diodes.com march 2018 ? diodes incorporated dm n2055u important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated doe s not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnif y and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this docum ent is written in english but may be translated into multiple languages for reference. only the english version of this docum ent is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specific ally not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems w hich: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cust omers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2018 , diodes incorporated www.diodes.c om
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